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| GSI Technology Samples 144Mbit SigmaQuad(TM)/SigmaDDR(TM)-II And II+ SRAMs |
SANTA CLARA, Calif., Jan 13, 2010 (BUSINESS WIRE) -- GSI Technology (NASDAQ:GSIT) today announced sampling of its groundbreaking 144Mbit SigmaQuad and SigmaDDR Fast SRAMs, in both Type-II and Type-II+ versions. Offered in 36 different configurations, not counting speed bin and temperature variations, this family of 65nm SRAMs provides the market's highest level of integration available for any SRAM type and includes versions that deliver 65Gb/s of raw data bandwidth and others that deliver fully random address rates as high as 500 MHz. In addition to early applications in high performance test equipment, these 144Mbit Fast SRAMs are ideal for networking applications, including 40G/100G internet routers, Ethernet switches, and 3G base stations. The family will also go into medical imaging and military signal processing systems that demand large, high transaction rate memory arrays. "As of Monday we have already delivered customer samples," said Lee-Lean Shu, CEO of GSI Technology, "and leading customers like ZTE and H3C are particularly anxious to receive additional shipments this week since they have not yet been able to get 144Mbit parts from any other vendor." According to David Chapman, VP of Marketing and Applications Engineering for GSI Technology, "The rich selection of architectures and features available in our 144Mbit product family allows system designers to find exactly the right SRAM, whether they are optimizing for high bandwidth, low latency, or high transaction rate performance." Mathieu Duprez, president of MuTest, said, "GSI is the only vendor to deliver 144Mbit SRAMs to us so far. We put high value on early access to leading edge technology and are pleased to be working with GSI." Building on experience gained while shipping 144Mbit stacked die modules since 2008, the new 144Mbit monolithic family allows GSI to deliver a better power/performance ratio and a better price/performance ratio to both current and new customers. In addition, architectural innovations in the SigmaQuad/SigmaDDR-II+ devices include On-die Termination (ODT) that improves signal integrity, reduces system cost and saves board space by eliminating any need for external termination resistors. Availability GSI Technology's 144Mbit SigmaQuad/SigmaDDR-II and SigmaQuad/SigmaDDR-II+ products are sampling now. Pricing for the GS81302D19-333 is $170.00 while the GS81302D18-167 is $145.00 in 1,000 piece quantities. For information on GSI's 144Mbit SigmaQuad/SigmaDDR-II products go to http://www.gsitechnology.com/144Mbit_SQII.html. About GSI Technology Founded in 1995, GSI Technology, Inc. is a leading provider of high performance SRAMs primarily incorporated in networking and telecommunications equipment. Headquartered in Santa Clara, California, GSI Technology is ISO 9001 certified and has world-wide factory and sales locations. For more information, please visit http://www.gsitechnology.com. About ZTE ZTE is a leading global provider of telecommunications equipment and network solutions. It has the widest and most complete product range in the world - covering virtually every sector of the wireline, wireless, service and terminals markets. The company delivers innovative, custom-made products and services to over 500 operators in more than 140 countries, helping them to achieve continued revenue growth and to shape the future of the world's communications. ZTE commits around 10% of its annual turnover to research and development and takes a leading role in a wide range of international bodies developing emerging telecoms standards. A company with sound corporate social responsibility (CSR) initiatives, ZTE is a member of the UN Global Compact that strictly adheres to the Ten Principles of the Global Compact in developing and carrying out CSR programs. ZTE is China's only listed telecoms manufacturer, with shares publicly traded on both the Hong Kong and Shenzhen Stock Exchanges (H share stock code: 0763.HK / A share stock code: 000063.SZ). For more information, please visit http://www.zte.com.. About H3C H3C Technologies Co., Limited (H3C), a wholly owned subsidiary of 3Com Corporation, is a leading global supplier of IP-based products and solutions. With principal operations in Hangzhou, China, H3C employs 4,800 people worldwide. To maintain a level of innovation and technical excellence, H3C operates advanced R&D facilities in Beijing, Hangzhou and Shenzhen in China; invests more than 15 percent of revenues back into R&D every year and has more than half of the workforce engaged in research and development. To date, H3C has applied for more than 2,000 patents. For more information, please visit http://www.h3c.com. About MuTest Founded in 2009 in St Etienne, France by a team coming from major ATE suppliers, MuTest is committed to developing highly integrated test systems for high performance digital IC. The MuTest HWBitmap tester has a particular focus on high speed memory debug and characterization. For more information, please visit http://www.mu-test.com. Forward-Looking Statements The statements contained in this press release that are not purely historical are forward-looking statements within the meaning of Section 21E of the Securities Exchange Act of 1934, as amended, including statements regarding GSI Technology's expectations, beliefs, intentions, or strategies regarding the future. All forward-looking statements included in this press release are based upon information available to GSI Technology as of the date hereof, and GSI Technology assumes no obligation to update any such forward-looking statements. Forward-looking statements involve a variety of risks and uncertainties, which could cause actual results to differ materially from those projected. These risks include those associated with fluctuations in GSI Technology's operating results; GSI Technology's historical dependence on sales to a limited number of customers and fluctuations in the mix of customers and products in any period; the rapidly evolving markets for GSI Technology's products and uncertainty regarding the development of these markets; the need to develop and introduce new products to offset the historical decline in the average unit selling price of GSI Technology's products; the challenges of rapid growth followed by periods of contraction; and intensive competition. Further information regarding these and other risks relating to GSI Technology's business is contained in the Company's filings with the Securities and Exchange Commission, including those factors discussed under the caption "Risk Factors" in such filings. <SOURCE: GSI Technology GSI Technology |
GSI Technology, Inc. Introduces Revolutionary Next Generation SRAM Architecture |
— New Products up to 50% Faster Than Nearest Competitors — SANTA CLARA, Calif.--(BUSINESS WIRE)--Nov. 30, 2009-- GSI Technology (Nasdaq: GSIT) announces the availability of SigmaQuad-IIIe™ and SigmaDDR-IIIe™, two new SRAM products whose revolutionary architecture provides the ultimate in system performance, reliability, and flexibility for applications that require a high random address rate. They are specifically designed to meet the growing memory requirements of networking systems—the backbone of the Internet. "To most of the world, 'fast memory' means high bandwidth data, while in SRAM circles it has typically meant low latency," said David Chapman, Vice President of Marketing and Applications Engineering for GSI Technology. "But today, networking system designers need something more. The IIIe family delivers more, including the first memory product ever that can sustain continuous fully random read and write transactions every single nanosecond. "This sort of capability is terribly important to those wishing to measurably enhance the performance of networking systems," noted Chapman. "And because these parts allow designers to solve problems directly rather than through increasing architectural complexity, these SRAMs help cut development costs and improve our customer’s time-to-market. Although improvement in random address rate — the measure of how often a new fully random access can be executed in a memory device — is sure to be seen as the biggest contribution of this product family, the series also includes the highest bandwidth SRAMs available on the open market and the most complete set of signal integrity improvement tools SRAM users have ever had." Performance At 625 MHz, the new 72Mbit Type–IIIe products feature the market’s fastest available Burst of 4 operation, which is 14% faster than the nearest competitor, and the market's fastest Burst of 2 operation, which is 50% faster than the nearest competitor. Packaged in a 260 BGA with checkerboard power and ground pin out, these devices deliver both high transaction rate operations and very high data bandwidth with dramatically improved signal integrity to control system noise. Additionally, new features have been added to ease host memory controller design and reduce Soft Error Rate (SER). GSI’s SigmaQuad/SigmaDDR-IIIe devices offer both obvious and subtle improvements over previous generations of Quad and DDR SRAM products. An improved input clocking scheme provides the ability to optimize input setup and hold times in a variety of board layout schemes and an improved output clocking scheme provides a more consistent and therefore a wider data output valid window. In addition, user-configurable output echo clocks can be centered or edge-aligned. There is also a selectable read pipeline length to maximize input clock frequency. Another feature is highly robust input termination available on all synchronous inputs to minimize signal reflections. Availability GSI Technology's 72Mbit SigmaQuad/SigmaDDR-IIIe products are sampling now. Multiple application notes and a white paper are available. For more information on GSI’s 72Mbit SigmaQuad/SigmaDDR-IIIe products go to http://www.gsitechnology.com/SigmaIIIe.htm or contact your local sales representative at http://www.gsitechnology.com/sales.htm. About GSI Technology Founded in 1995, GSI Technology, Inc. is a leading provider of high performance SRAMs primarily incorporated in networking and telecommunications equipment. Headquartered in Santa Clara, California, GSI Technology is ISO 9001 certified and has world-wide factory and sales locations. For more information, please visit http://www.gsitechnology.com/. Forward-Looking Statements The statements contained in this press release that are not purely historical are forward-looking statements within the meaning of Section 21E of the Securities Exchange Act of 1934, as amended, including statements regarding GSI Technology’s expectations, beliefs, intentions, or strategies regarding the future. All forward-looking statements included in this press release are based upon information available to GSI Technology as of the date hereof, and GSI Technology assumes no obligation to update any such forward-looking statements. Forward-looking statements involve a variety of risks and uncertainties, which could cause actual results to differ materially from those projected. These risks include those associated with fluctuations in GSI Technology’s operating results; GSI Technology’s historical dependence on sales to a limited number of customers and fluctuations in the mix of customers and products in any period; the rapidly evolving markets for GSI Technology’s products and uncertainty regarding the development of these markets; the need to develop and introduce new products to offset the historical decline in the average unit selling price of GSI Technology’s products; the challenges of rapid growth followed by periods of contraction; and intensive competition. Further information regarding these and other risks relating to GSI Technology’s business is contained in the Company’s filings with the Securities and Exchange Commission, including those factors discussed under the caption “Risk Factors” in such filings. Source: GSI Technology, Inc. GSI Technology, Inc. |
First Parallel Device in a Family of New High-Speed F-RAM Devices From Ramtron
COLORADO SPRINGS, CO - (Nov 10, 2008) Ramtron International Corporation (NasdaqGM:RMTR - News), a leading developer and supplier of nonvolatile ferroelectric random access memory (F-RAM) and integrated semiconductor products, today launched the first parallel device in a family of new parallel and serial F-RAM products that offer higher-speed read/write performance, lower voltage operation, and optional device features. The newest device in Ramtron's V-Family of F-RAM products is the FM28V100, a 1-megabit (Mb), 2.0 to 3.6-volt, parallel nonvolatile RAM in a 32-pin TSOP-I package that features fast access, NoDelay(TM) writes, virtually unlimited read/write cycles, and low power consumption. The FM28V100 is an ideal upgrade from 1Mb battery-backed SRAM in industrial control, metering, medical, automotive, military, gaming, and computing applications, among others. In addition to the FM28V100, Ramtron recently announced the 512Kb FM25V05 and 1Mb FM25V10 serial SPI V-Family products.
Second Serial Device in a Family of New High-Speed F-RAM Devices From Ramtron
COLORADO SPRINGS, CO - (Nov 10, 2008) Ramtron International Corporation (NasdaqGM:RMTR - News), a leading developer and supplier of nonvolatile ferroelectric random access memory (F-RAM) and integrated semiconductor products, today announced the second serial device in a family of new F-RAM products that offer high-speed read/write performance, low voltage operation, and optional device features. The FM25V05 is a 512-kilobit (Kb), 2.0 to 3.6-volt, serial peripheral interface (SPI) nonvolatile RAM in an 8-pin SOIC package that features fast access, NoDelay(TM) writes, 1E14 read/write cycles, and low power consumption. The FM25V05 is an ideal alternative to serial Flash and serial EEPROM memory in industrial control, metering, medical, automotive, military, gaming, and computing applications, among others. In addition to the 512Kb FM25V05, the recently announced 1-megabit FM25V10 is also available. Samples of the FM25V05 are available now in a RoHS-compliant, 8-pin SOIC package. Unit pricing begins at $4.66 in high volume.
All Flex Announces Flexible Heaters as New Product Offering
Northfield, MN - (Tuesday, August 19, 2008) All Flex Acquisitions LLC, a manufacturer of flex circuits and flex circuit assemblies, announces a new capability in producing custom Flexible Heater Circuits. Flexible Heater Circuits are thin, lightweight and flexible substrates that can provide heat to selected areas of instrumentation, electronic systems, equipment and a variety of other applications.
All Flex can reverse engineer, design and fabricate flexible heaters to meet customer's exact requirements. Flexible polyimide heaters and heater assemblies are fabricated with a variety of metal alloys to deliver custom solutions for heating capacity, watt density and other application specific customer needs.
"Designing, building and supplying flexible heaters on polyimide substrates is a natural extension of our existing product line technology," said Greg Closser, President of All Flex. "We are responding to the requests of our rapidly growing customer base. Heaters utilize similar manufacturing and design capabilities as our flexible circuitry, and the benefits sought dovetail with current market needs. The All Flex expansion into heaters helps position us with the relentless electronic industry demand for more value in less space."
Polyimide material and adhesive systems are appropriate in most any application that would be suitable for a flexible circuit; including exposure to harsh chemicals and corrosive environments, temperature extremes, aerospace and vacuum environments requiring low out-gassing and applications constrained by limited space and weight for the heater. Because polyimide is light weight and flexible, heaters can be built in irregular shapes and conform to contours and three-dimensional patterns.
About All Flex
All Flex is a privately owned company located in Northfield, Minnesota. All Flex has served a variety of markets with flexible circuit applications, including single-sided flexible circuits, double-sided flexible circuits and multi layer flex circuitry. All Flex provides quick turn prototypes and low to medium volume manufacturing and assembly of flexible PCBs. Its unique product offerings include Maxi- Flex (40' +) and Flexible Circuit Heaters. For more information, email Focus at sales@focusdt.com
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• Energy Efficient Schottky Diode |
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The CMASH-4 is a high quality 40V, 200mA Schottky diode with a low forward voltage drop (VF) of 0.38V maximum at 1.0mA and a switching speed (trr) of 5.0ns maximum. Designed for applications requiring an energy efficient fast switching diode in an ultra small package, the CMASH-4 in the SOD-923 utilizes 55% less board space as compared to the SOD-523 package, and has a 48% lower package profile making it ideal for most portable handheld electronic devices such as: SMART phones, Cell phones, Digital Cameras, MP3 players, GPS systems, Notebook PCs, and Camcorders. |
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This new energy efficient diode is ideal for most portable handheld electronic device applications, such as: |
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VRRM = 40V (max) |
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Product Announcement - PA SOD-923 |
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SOD-923 Package details & material composition |
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The CMASH-4 is available 8,000 pieces on 7” Tape & Reel. |
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F-RAM replaces EEPROM for faster writes at lower power in safe, explosion-proof product |
COLORADO SPRINGS, CO – May 6, 2008 – Ramtron International Corporation (Nasdaq: RMTR), a leading developer and supplier of nonvolatile ferroelectric random access memory (F-RAM) and integrated semiconductor products, today announced that China’s Shanghai Welltech Automation Co., Ltd., a leading pressure transmitter and magnetic flow meter supplier, has designed Ramtron’s FM25L16 16-kilobit (Kb) serial F-RAM memory device into its 2000S safe pressure transmitters. F-RAM was selected to replace EEPROM in Welltech’s new, intrinsically safe, explosion-proof transmitters.
Intelligent pressure transmitters have become increasingly popular because of the complexity of today’s process control applications in industries such as chemicals, pharmaceuticals, power, water treatment, food processing, etc. The 2000S offers advanced features such as two-way communication, remote calibration, and self-diagnostics. These features enable higher accuracy, greater reliability, and more advanced communication protocols, which reduce the time, effort and expenses associated with start-up and maintenance.
The 2000S combines sensing technology and intelligent electronics in a single package. Nonvolatile F-RAM memory – with its fast writes, high endurance, and low power – is an integral element in this advanced design. In the 2000S, F-RAM stores configurable parameters such as transmitter ranges, signal types, fluid properties, etc., and retains this data when power is removed so that the transmitter is ready for immediate use when power is restored.
F-RAM also saves calibration/compensation data for the 2000S’s automatic self-calibration routines, and performs event and data logging, which the system uses to diagnose whether maintenance is required.
“We have replaced EEPROM with F-RAM in our smart and safe 2000S pressure transmitters to extend write speed and endurance, and to improve overall safety against potential explosions,” explain Welltech R&D Engineers. “We used EEPROM in our first 2000S designs, but it failed in power consumption tests since the 2000S has a total operating current of less than 3.6mA. F-RAM’s low power consumption enables intrinsic safety, while its fast writes reduce variability and microprocessor (MPU) overhead in our new smart pressure transmitters.”
F-RAM instead of EEPROM
Intrinsic safety: The 2000S is “intrinsically safe”. This means it is designed to prevent the release of energy that can cause the ignition of flammable material and cause an explosion. As such, it requires a memory device such as F-RAM that has very low operating currents.
Reduced variability: F-RAM’s fast writes are integral to reducing variability in computing process measurements. This produces more accurate measurements for self-diagnostics, greater system control, and improved profitability.
Reduced MPU overhead: The 2000S includes an MPU for complex calculations. As the processing becomes more intensive in intelligent pressure transmitter applications, F-RAM’s fast write advantage alleviates MPU overhead.
About the FM25L16 and F-RAM
F-RAM memory offers the benefits of RAM technology, but is nonvolatile. F-RAM provides NoDelay™ write access, virtually unlimited write endurance (approximately 1e14 write cycles), and low power consumption. The FM25L16 is a 16Kb F-RAM device with an industry-standard serial peripheral interface (SPI). The device reads and writes continuously at bus speeds up to 18 MHz and low operating currents. Comparable EEPROM devices have long write delays and write-polling software, endurance limited to less than one million write cycles, and operate at higher power. Available in lead-free, 8-pin SOIC and DFN packages, the FM25L16 operates at 3 volts over the industrial temperature range.
http://www.ramtron.com/press-center/press-release.aspx?id=78
RAMTRON TO DEMONSTRATE FIRST F-RAM ENHANCED EVENT DATA RECORDER AT EMBEDDED SYSTEMS CONFERENCE
Ramtron also to showcase new high-density serial F-RAM device at booth #2501
COLORADO SPRINGS, CO - (March 26, 2008) - Ramtron International Corporation (Nasdaq: RMTR), a leading developer and supplier of nonvolatile ferroelectric random access memory (F-RAM) and integrated semiconductor products, today announced that it will exhibit at this year’s Embedded Systems Conference, at booth #2501. The conference will be held at the McEnery Convention Center in San Jose, California, from April 15 to 17. Click to continue … http://www.ramtron.com/doc/News/Release_detail.asp?ID=266
Connect One releases new firmware version for iChip CO2128
San Jose, CA - (March 20, 2008) - Connect One has just released new firmware (version 722) for the latest iChip, CO2128. The newly released version includes numerous new features as well as bug fixes.
New features include:
- iRouter
- Configured to work in iRouter mode, iChip operates as a router of IP packets between two platforms: dial-up/cellular and LAN/WiFi.
- Fast USART support
- High baud rates, up to 3Mbps, can now be reached between host and iChip via one of iChip's USARTs.
- New WiFi capabilities
- New control commands were added to the WiFi module that provide improved control over the radio, power and transmission
- New roaming mode was added where iChip can roam seamlessly among Access Points sharing the same SSID and security configuration without interrupting its IP connectivity.
- New monitoring mechanism that is sensitive to drops in AP signal strength. When iChip detects such a drop, it automatically starts searching for APs in its vicinity that have a stronger signal, while maintaining connection with the current AP.
- Multiple SSID support, which defines an ordered list of SSIDs of Access Points or ad-hoc networks for the iChip use to connect upon power-up.
- iChip Power Save Mode for achieving energy savings.
- Serial over Telnet, RFC2217 support
- This new mode opens a data socket as a TELNET socket, which allows negotiations of TELNET options over the same socket while the host is sending and receiving raw data. The new mode includes support of the RFC2217 standard.
If you have any questions regarding the new CO2128 firmware update or would like more information about Connect One technology, please contact me at Focus at sales@focusdt.com or 440-285-5591.
Ultra Tiny and Energy Efficient: Low VCE(SAT) Transistors in the SOT-953 SMD package
CMNT3904E and CMNT3906E
Hauppauge, NY USA – ( March 18, 2008) - Central Semiconductor announces the release of the FEMTOmini™ CMNT3904E (NPN) and CMNT3906E (PNP) Low VCE(SAT) transistors, packaged in the ultra tiny SOT-953 surface mount package. These new transistors are designed with enhanced specifications including: a maximum Collector-Base Voltage of 60V (Standard PNP devices are 40V max.), a maximum Emitter-Base Voltage of 6.0V (standard PNP devices are 5.0V max.), and a maximum VCE(SAT) of 0.2V at 50mA (standard devices are 0.3V for NPN and 0.4V for PNP).
With these newly enhanced specifications, the CMNT3904E and CMNT3906E are ideal for portable battery powered applications requiring an energy efficient transistor in an ultra small package. Applications include: DC-DC converters, switching and driver circuits, temperature sensing, small signal amplification and switching, and LED backlighting. The SOT-953 has a maximum package profile of 0.5mm and utilizes 33% less board space than the SOT-523 package.
The CMNT3904E and CMNT3906E transistors are available on 7 ” Tape & Reel.
Prices start at $0.08 each for 3,000 pcs on a 7 ” reel.
Sample devices are available upon request.
RAMTRON INTRODUCES 64-KILOBIT F-RAM ENHANCED PROCESSOR COMPANION WITH EMBEDDED 32 KHZ CRYSTAL
New single-chip solution reduces bill of materials and eliminates fatigue on crystal pins; ideal for meters and other time-stamp applications
COLORADO SPRINGS, CO — March 4, 2008 — Ramtron International Corporation (Nasdaq: RMTR), a leading developer and supplier of nonvolatile ferroelectric random access memory (F-RAM) and integrated semiconductor products, today launched the FM3135, a 64-kilobit (Kb), 3-volt Processor Companion product that combines the benefits of nonvolatile F-RAM memory with an enhanced real-time clock/calendar (RTC) and integrated 32 kHz watch crystal. Read more at http://www.ramtron.com/doc/News/Release_detail.asp?ID=262
World's First Multi-Message ChipCorder® for Direct Trigger Applications
San Jose, CA — At 2008 IIC-China Shenzhen(Mar.3-4) & Shanghai(Mar. 10-11), Winbond Electronics Corp. introduces a new multi-message ChipCorder® with up to eight direct triggers for the automotive, industrial and consumer markets. The ISD1900 provide high quality voice in a single chip, reducing the BOM cost and shortening time to market. It is the perfect solution for applications with multiple record and playback buttons, with each button triggering a different message.
Current voice solutions providing multiple messages of similar durations often require a microcontroller with significant coding efforts. The ISD1900 eliminates both the need for a microcontroller and code programming. Therefore, engineers can quickly and easily add voice functionality into their applications and have their product ready to launch within a short period of time and at a lower BOM cost.
The ISD1900 is the latest addition to Winbond's award winning ChipCorder® record and playback family. Key features of this series include:
- Wider operating voltage (2.4V to 5.5V)
- Higher sampling frequency (4kHz to 12kHz)
- User-selectable durations from 10.6 seconds to over 2 minutes
- Feed-through control that takes analog signals and feeds it to the speaker outputs for voice broadcasting and monitoring
- Dual operating modes:
- Multiple messages with variable duration triggered by start and end address inputs
- Up to eight messages of similar duration triggered by each individual button
The ISD1900 was also specifically designed for easy migration from older ChipCorder® series such as ISD1400 and ISD2500 which have now been End of Life. Customers can preserve the functionalities of their current designs with minor board changes needed. Details of this migration are available on the website at http://www.winbond.com/ .
"Winbond continues its commitment to provide new Voice on System Chip (VoSC) solutions to enhance its ChipCorder® family and provide engineers greater feature and design flexibility at reduced costs and time to market", said CS Lin, Senior Director of Product Marketing, Winbond Electronics Corporation America. "We are proud to introduce our new ISD1900 because as market pressures continue to increase to provide cost effective products with shorter development time, the ISD1900 will be the solution of choice."
The ISD1900 is available in a 28-pin SOIC lead-free package. Die form is available under the ISD14B00 series. Additional product information for both the ISD1900 and ISD14B00 are available at http://www.winbond.com/. Samples are available now from local Winbond sales offices and its authorized representatives.
About Winbond
Winbond Electronics Corp. was founded in 1987 in Hsinchu Science Park, Taiwan. The company owns the capabilities of both IC design and manufacturing and provides entire solutions to the customers. Winbond focuses on the development of four main product lines, including μC & μC-based Consumer IC, Computer Logic IC, Mobile RAM, and Flash Memory, and it has built a solid foundation and a strong reputation in the semiconductor industry.
Winbond has five business groups, including Consumer IC Business Group, Computer Logic IC Business Group, DRAM Product Business Group, Flash Memory IC Business Group, and Memory IC Manufacturing Business Group. Each business group operates as a profit center to strengthen the company's operation model and keep the maneuverability and flexibility of the organization to adapt to the ever-changing semiconductor industry.
Winbond has over 4,000 employees worldwide and operates one 150mm wafer fab and one 300mm wafer fab. Winbond owns more than 2,500 patents worldwide and has subsidiaries in the USA, China, Israel, and Japan.
For more information, please visit: http://www.winbond.com
Note: Winbond and ChipCorder are registered trademark of Winbond Electronics Corporation. All other trademarks and copyrights mentioned herein are the property of their respective owners.
Winbond Introduces First Quad Programmable Extended CODEC/SLIC IC Optimized Short-Loop VoIP Applications
Cost-Efficient W684386 Features Four-Channel Design, Industry's Best Idle Channel Noise and Return Loss Performance
SAN JOSE , Calif., USA - (Feburary 27, 2008) Winbond Electronics Corp., a leading supplier of semiconductor solutions to the consumer, computer, communications and electronics products markets, today introduced the industry's first four-channel CODEC optimized for short-loop VoIP applications. The newest member of Winbond's popular Pro-X (PROgrammable Extended) Series of CODEC/SLIC devices, the W684386 is a highly integrated solution to support four FXS telephone line interfaces on a single low-power CMOS device. The W684386 also delivers the industry's best idle channel noise and return loss performance – benchmarks which VoIP-system makers are making a priority to reduce.
Optimized for short-loop applications, the W684386 targets the VoIP equipment market, including products such as high-density VoIP gateways, analog telephone adapters, voice-enabled DSL and cable modems, IP-PBX, FTTX systems, and set-top boxes.
"As port densities on VoIP equipment increase dramatically with each generation, system designers are looking for a flexible solution with excellent price and performance benchmarks," said Ike Saeed, Vice President of Marketing of Winbond's Mixed Signal Product Center. "The W684386 fills this need with a robust four-channel design that not only reduces system cost but also improves the clarity of the VoIP signals."
Proprietary Technology Delivers Versatility, Low Overhead, User-Friendliness
The W684386 leverages Winbond's proprietary CODEC/SLIC architecture, combining four programmable CODECs that enable the device to support a comprehensive set of signaling capabilities for telephone line supervision and control, offload processor overhead and offer designers a user-friendly signal-processing environment. The W684386's four-channel SLIC block supports programmable impedance matching and trans-hybrid balancing ensuring that worldwide compliance can be supported from a single hardware configuration.
The W684386 also incorporates programmable DC-to-DC controllers, which allow power consumption optimization on a per channel basis. The device can also support higher-density architectures with external ringing and centralized power options. Winbond's proprietary CODEC/SLIC is protected by U.S. Patent No. 7,260,212 issued August 21 2007.
Availability, Pricing
The W684386 is available now in a 128-QFP package, at $4.50 (10K quantities), with full production scheduled for Q2. Three evaluation boards are available, each featuring a different DC-to-DC architecture option (per-channel inductor-based, single transformer-based or external battery/external ringing architecture). Each evaluation board features Winbond's user-friendly PC-based Graphical User Interface (GUI). Samples and evaluation boards are available now from Focus.
Additional product information on the full Pro-X Series is available at http://www.winbond.com/.
About Winbond
Winbond Electronics Corp. was founded in 1987 in Hsinchu Science Park, Taiwan. The company owns the capabilities of both IC design and manufacturing and provides entire solutions to the customers. Winbond focuses on the development of four main product lines, including μC & μC-based Consumer IC, Computer Logic IC, Mobile RAM, and Flash Memory, and it has built a solid foundation and a strong reputation in the semiconductor industry.
Winbond has five business groups, including Consumer IC Business Group, Computer Logic IC Business Group, DRAM Product Business Group, Flash Memory IC Business Group, and Memory IC Manufacturing Business Group. Each business group operates as a profit center to strengthen the company's operation model and keep the maneuverability and flexibility of the organization to adapt to the ever-changing semiconductor industry.
Winbond has over 4,000 employees worldwide and operates one 150mm wafer fab and one 300mm wafer fab. Winbond owns more than 2,500 patents worldwide and has subsidiaries in the USA, China, Israel, and Japan.
For more information, please visit: http://www.winbond.com
*Note: Winbond is registered trademarks of Winbond Electronics Corp.. All other trademarks and copyrights mentioned herein are the property of their respective owners.
Central’s new 40V Schottky Diode in a Tiny Leadless Package
Hauppauge, NY USA – (January 23, 2008) – Central Semiconductor Corp. announces the release of the CFSH-4 Schottky Diode in the SOD-882L Tiny Leadless Package (TLP™). The CFSH-4 is a high quality 40 Volt, 200mA Schottky Diode with an extremely fast switching speed of 5ns. Designed for applications where ultra small size with reasonable power dissipation is a prime requirement, the CFSH-4 is ideal for portable battery powered applications such as: DC-DC converters, switching circuits, and LCD backlighting. With its bottom contacts, as opposed to protruding leads, the SOD-882L TLP™ utilizes 58% less board space than the SOD-523 package, and has a maximum package profile of 0.4mm.
The CFSH-4 is available on 7” Tape & Reel. Prices start at US$0.10 each for 3000 pieces on 7” Tape & Reel. Sample devices are available upon request.
Central Semiconductor manufactures leading edge discrete semiconductors and is always eager to explore design engineers' requests for special requirements.
Specifications for this new device can be found in the New Products / Latest Updates section of Central’s website at: www.centralsemi.com/product/whatsnew/newprod/
Hi Resolution Graphics available at: www.centralsemi.com/graphics/download
High-Density Nonvolatile F-RAM Memory Eliminates Battery and Reduces Footprint for Cost Effective SRAM Replacement (Article from Future Technology Magazine)
Ramtron 4Mb F-RAM Nonvolatile Memory Being Designed into Advanced Applications
COLORADO SPRINGS, CO – (January 02, 2008) - Ramtron’s new high-density F-RAMs are based on a groundbreaking new 130nm F-RAM manufacturing process. Ramtron’s FM2xL16 series of high-density, 3V, parallel F-RAM devices include:
- The FM22L16 - 4Mb parallel nonvolatile F-RAM device
- The FM21L16 - 2Mb parallel F-RAM device
Superior Replacement for Serial Flash and SRAM, Lower Power than MRAM
F-RAM combines the fast access and low-power of RAM, but is nonvolatile. Compared to EEPROM and Flash, F-RAM writes faster and many more times with less power.
F-RAM also consumes much lower power than MRAM and is already commercially proven in demanding applications.
Available in a 44-pin TSOP package, the FM2xL16 is a drop-in replacement for asynchronous SRAMs but does not need a battery to backup data, making it an inherently more reliable device with a smaller footprint.
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FM21L16 Block Diagram
FM22L16 Block Diagram
Three Distinct Factors Account for F-RAM’s Continued Rise in Popularity:
First, it performs write operations at the same speed as read operations. Referred to as writing at bus speed, no delays are needed for the written data to become nonvolatile. This separates F-RAM from other nonvolatile memories that are based on floating gate technology, which causes long write delays. A typical EEPROM write operation takes 10 milliseconds to be effective after the data is written to the input buffer whereas F-RAM writes in nanoseconds. In addition, with F-RAM, there is no erase operation since there is no preferred or default state. As with other RAM technologies such as SRAM, data is written to F-RAM without regard to the previous state.
Second, F-RAM offers virtually unlimited write endurance – it doesn’t wear out like other nonvolatile memory choices. Floating gate devices stop retaining data when they have been erased too many times. This is a hard failure mechanism. A fatigued memory cell can no longer store the programmed state. F-RAM does not exhibit this type of wear out.
Third, F-RAM operates without a charge pump enabling low power consumption. Floating gate technologies use high voltage to program a new state, so write operations require much higher power consumption than read operations. F-RAM writes at the process core voltage, be it 5V, 3V or lower, on more advanced processes.
How F-RAM Works:
Figure 2: F-RAM CMOS and Crystal
When an electric field is applied to a ferroelectric crystal the central atom moves in the direction of the field. As the atom moves within the crystal, it passes through an energy barrier, causing a charge spike. Internal circuits sense the charge spike and set the memory. If the electric field is removed from the crystal, the central atom stays in position, preserving the state of the memory. Therefore, when power fails F-RAM memory retains its data. It’s fast and it doesn’t wear out!
130nm Process:
The FM2xL16 is based on a groundbreaking 130nm F-RAM manufacturing process developed by Texas Instruments in partnership with Ramtron. Produced on a standard CMOS logic process with only two additional mask steps, the process uses 130nm geometries and an advanced capacitor-over-plug process.
Figure 3: TI’s proven 130nm process advances F-RAM technology
Featured Products:
| Part Number | Description | Data Sheet |
App. Notes |
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| FM21L16-60-TG |  |
2Mb Parallel F-RAM with 60ns Access in a 44-pin "Green"/RoHS TSOP-II Package |  |
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| FM22L16-55-TG | 4Mb Parallel F-RAM with 55ns Access in a 44-pin "Green"/RoHS TSOP-II Package | |
This article was featured in Future Technology Magazine